The concentration of primary radiation-induced defects was previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionization and displacements, in the frame of the Lindhard theory. The primary displacement defects were vacancies and interstitials that were essentially unstable in Si. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity Si for detectors was modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained were solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of incident particles, for different temperatures; the corresponding stationary solutions were also presented.

Annealing of Radiation-Induced Defects in Silicon in a Simplified Phenomenological Model. S.Lazanu, I.Lazanu: Nuclear Instruments and Methods in Physics Research B, 2001, 183[3-4], 383-90