Correlation between evolution of Er-luminescent centers and the incorporation of Er and O during solid phase epitaxy in Er and O co-implanted Si was investigated, especially paying attention to the role of O on segregation and trapping of Er. The SPE growth rate of the amorphous Si layer, which was monitored in real time, was greatly enhanced from the beginning stage of solid-phase epitaxy by more than one order magnitude in Si co-doped with Er and O, comparing with that of the undoped amorphous Si layer. The strong interaction between Er and O in circumstances under the presence of both species determines the concentration profiles of a majority of the Er and the O, leading to the formation of Er-luminescent centers.

Correlation between Er-Luminescent Centers and Defects in Si Co-Implanted with Er and O. K.Nakashima, O.Eryu, H.Akiyama, Y.Maeda, H.Ebisu: Nuclear Instruments and Methods in Physics Research B, 2001, 175-177, 208-13