Extended defects in quenched Si crystals were studied. Prismatic punched-out dislocations were found in the crystals. These dislocations disappeared depending on the holding time just after the growth. This phenomenon was closely related to the diffusion of point defects during the holding at high temperature. The defects were observed by the infrared microscope after Cu decoration. It should be noted that the prismatic dislocations density markedly decreased in B doped crystals. The crystal became remarkably uniform. This means that the mechanical strength at high temperature greatly increases or the behavior of interstitial and/or O atoms widely varied by doping with B. Defect formation due to interstitials and the effect of B was analyzed.

Annealing Effect and Impurity Doping Effects on the Defect Generation in Interstitial-Rich Si Crystals Observed by Infrared Microscopy. K.Terashima, S.Nishimura: Materials Science and Engineering B, 2002, 91-92, 178-81