The annealing behavior of the thermal conductivity and paramagnetic defects in the surface layer of ion-implanted Si were measured by using the photo-acoustic and electron spin resonance methods. The thermal conductivity increases at annealing temperatures above 600C and reaches a value as high as 168W/mK; which was the value of Si at 750C. The coefficient of correlation between thermal conductivity and electron spin resonance signal intensity was -0.98, i.e. the correlation was very good. The density of defects was evaluated through the annealing behavior of the thermal conductivity.

Photoacoustic Evaluation of Defects and Thermal Conductivity in the Surface Layer Of Ion Implanted Semiconductors. N.Takabatake, T.Kobayashi, Y.Show, T.Izumi: Materials Science and Engineering B, 2002, 91-92, 186-8