Hydrogen introduction into p+ Si was carried out by boiling in water to reduce the surface carrier concentration due to the formation of B¯H pairs. Carrier concentration profiles were estimated from Schottky diodes fabricated successfully on the hydrogenated surfaces. Boiling for times longer than 30min was not effective for the reduction of the carrier concentration near the surface. Instead, the repetition of the process, which consists of removal of the oxide and boiling in water for 15min, was found to introduce a large quantity of H. For the total boiling time of 28h, the carrier concentration decreased from the original value of mid 1018 to 2 x 1016/cm3 at the depth of 170nm. Iron¯B pairs (Ev + 0.1eV) were detected by deep-level transient spectroscopy measurements on hydrogenated p+ Si, which was intentionally iron-contaminated.

Hydrogen Introduction into p+ Silicon by Boiling in Water and its Application to Deep-Level Transient Spectroscopy Measurements. Y.Tokuda, T.Murase, T.Namizaki, T.Hasegawa, H.Shiraki: Materials Science and Engineering B, 2002, 91-92, 152-5