An overview was presented of random telegraph signals in solid-state devices, and especially in scaled Si MOSFETs. It was shown that, when properly analyzed, random telegraph signals were a sensitive local probe for the study of single defects and their
microscopic environment. In this way, new insights into trap dynamics and device physics could be gathered which were relevant to sub-micron and nano-electronic devices.

Random Telegraph Signal - a Local Probe for Single Point Defect Studies in Solid-State Devices. E.Simoen, C.Claeys: Materials Science and Engineering B, 2002, 91-92, 136-43