Photoluminescence study using Ar laser revealed that {311} defect-precursors exist in the samples annealed at either 620 or 670C after Si implantation. The peak energy shift from 0.94 to 0.90eV was a direct evidence of atomic structural transformation from the smaller precursor interstitial clusters to {311} defects. The atomic structure of the precursor was investigated by using a first-principle calculation program. The numerical calculation demonstrated that one of the most plausible structures for the precursors was the di-interstitial.

Photoluminescence Study of {311} Defect-Precursors in Self-Implanted Silicon. H.Tsuji, R.Kim, T.Hirose, T.Shano, Y.Kamakura, K.Taniguchi: Materials Science and Engineering B, 2002, 91-92, 43-5