The variation of fundamental properties of Si melts by adding B into the melts was studied. The surface tension decreases and the viscosity has a tendency to decrease with B addition. These property variations cause melt flow variations in a crucible. The temperature distribution near the growing interface varies during crystal pulling process with and without adding B. The parameter V/G (growth velocity/temperature gradient in the crystal) near the crystal growing interface apparently decreases with B addition. Defect formation due to interstitials and the effect of B was analyzed.

The Effects of Boron Impurity on the Extended Defects in CZ Silicon Crystals Grown under Interstitial Rich Conditions. K.Terashima, H.Noguchi: Journal of Crystal Growth, 2002, 237-239, 1663-6