The formation behavior of grown-in defects in Si crystals was investigated. The void defects were formed by the aggregation of the supersaturated vacancies during the growth process and the V/G parameter (V - growth rate, G - axial temperature gradient at the crystal/melt interface) controlled the vacancy concentration. The manner in which void defects were influenced by V/G and the cooling rate was investigated. The density of void defects (Nv) was proportional to the cooling rate (Cr) to the power of 1.5; that is, Nv = C1.5. This relationship held up to a cooling rate of 40K/min. On the other hand, the coefficient β increases with a decrease in V/G. The relation, Nv = βC1.5, did not hold for cooling rates greater than 40K/min, and O precipitation increased instead of void formation. This behavior supported the Voronkov void formation model.

Grown-In Defects in Silicon Crystals. K.Nakamura, T.Saishoji, J.Tomioka: Journal of Crystal Growth, 2002, 237-239, 1678-84