It was recalled that dual-type octahedral void defects were first observed in Czochralski Si in 1995. Each void was composed basically of 8 sub-planes of (111), but it was often

truncated by a (001) sub-plane in the crystal-growth direction. This was a clear characterization of void defects and was closely related to some physical phenomenon in Si melt growth. The present work characterized the occurrence of (001) sub-planes in void defects.

Octahedral Void Defects in Czochralski Silicon. M.Itsumi: Journal of Crystal Growth, 2002, 237-239, 1773-8