Float-zone Si melt doped or implanted with N exhibited absorption bands in the mid-infrared range that were caused by localized vibration modes of N pairs. Czochralski-grown Si crystals melt doped with N exhibited both these lines and additional absorption lines related to the interaction of N with O to form N-O complexes. The stability of these complexes was studied by subjecting Si samples containing these complexes to rapid thermal heat treatments at several temperatures and for varying times and monitoring the relative absorption by the complexes and the N pairs. It was found that the complexes

began to dissociate rapidly for temperatures above 700C, but they were still present to some extent even after annealing at temperatures as high as 1200C.

Dissociation of Nitrogen-Oxygen Complexes by Rapid Thermal Anneal Heat Treatments. J.L.Libbert, L.MuleStagno, M.Banan: Journal of Applied Physics, 2002, 92[3], 1238-41