A study was made of Pt–H complexes in Si which was doped with Pt and H by heating at 1000 to 1300C, followed by quenching in water, by measuring optical absorption at 5K and electron spin resonance at 8K. Optical absorption peaks at 1909.1 and 1910.3/cm were observed in addition to the peaks due to the PtH and PtH2 complexes. The H doping temperature dependence of these peaks showed that the number of H atoms in the complex responsible for the 1909.1/cm peak was larger than that for the 1910.3/cm peak. Electron spin resonance signals which were due to the PtH3 complex were also observed. The annealing behaviors of the 1910.3/cm peak and the ESR signals were almost the same. Based on these results, the 1909.1 and 1910.3/cm peaks are, respectively, attributed to the PtH4 complex and the PtH3 complex.

Platinum–Hydrogen Complexes in Silicon Observed by Measurements of Optical Absorption and Electron Spin Resonance. N.Fukata, T.Mchedlidze, M.Suezawa, K.Saito, A.Kasuya: Applied Physics Letters, 2002, 81[1], 40-2