Grown-in defects including O precipitates and voids in N-doped Czochralski Si were investigated. It was found that the formation of grown-in O precipitates in this material could be divided into 2 stages. Large precipitates which were supposed to be enhanced by N2–V2–Ox complexes were generated around 1150C, while the small precipitates supposed to be enhanced by NmOn complexes were formed at 750C and below. Moreover, it was revealed that the O precipitation behavior in the mixed-type N-doped Czochralski Si, which contains vacancy-type and interstitial-type defects distinguished by an OSF-ring in the oxidized wafer, was in sharp contrast to that in the mixed-type Czochralski Si, when subjected to 1-step high-temperature annealing (1050C, 32h) and 2-step annealing (800C, 4h; 1050C, 16h). On the other hand, it was found that, compared with Czochralski Si, N-doped Czochralski Si had much denser crystal originated particles in smaller sizes,

which were verified to were annihilated at relatively lower temperatures. Based on the experimentally found phenomena, a tentative model that takes into account the formation of N-related complexes involving O atoms and vacancies, void formation, and O precipitation was presented.

Grown-In Defects in Nitrogen-Doped Czochralski Silicon. X.Yu, D.Yang, X.Ma, J.Yang, L.Li, D.Que: Journal of Applied Physics, 2002, 92[1], 188-94