The lifetimes of H- and D-related stretching modes in Si were measured by high-resolution infra-red absorption spectroscopy and transient bleaching spectroscopy. The lifetimes were found to be extremely dependent on the defect structure, and ranged from 2 to 295ps. Contrary to assumptions, it was found that the lifetimes of Si-D modes were typically longer than those for the corresponding Si-H modes.

Lifetimes of Hydrogen and Deuterium Related Vibrational Modes in Silicon. M.Budde, G.Lüpke, E.Chen, X.Zhang, N.H.Tolk, L.C.Feldman, E.Tarhan, A.K.Ramdas, M.Stavola: Physical Review Letters, 2001, 87[14], 145501 (4pp)