During the oxidation of Si, interstitials were generated at the oxidizing surface and diffused into the Si. The diffusion of B was used to map the local interstitial supersaturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials versus the distance above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial supersaturation at the Si surface, extrapolated from the depth profiles was about 25 and about 13 for 750 and 850C, respectively. Using the measured interstitial concentration at the surface, the Si interstitial injection into the Si was calculated for oxidation at 750 and 850C. Finally, it was found that the surface boundary condition remains relatively fixed for an interstitial injection rate ranging over 4 orders of magnitude.

Quantitative Measurement of the Surface Silicon Interstitial Boundary Condition and Silicon Interstitial Injection into Silicon During Oxidation. M.S.Carroll, J.C.Sturm, T.Büyüklimanli: Physical Review B, 2001, 64[8], 085316 (7pp)