A theoretical treatment was presented for the effect of stress upon dopant and defect diffusion in Si. A prior treatment of vacancy diffusion in strained fcc metals was extended to include more general defects and crystallinity. The new method was applied to two examples in Si: a vacancy, including Jahn-Teller distortions, and a B-I pair. Both were predicted to exhibit isotropic diffusion for (100)-grown uniaxially strained films, but strong anisotropic diffusion for (111) films.

Effect of Stress on Dopant and Defect Diffusion in Si - a General Treatment. M.S.Daw, W.Windl, N.N.Carlson, M.Laudon, M.P.Masquelier: Physical Review B, 2001, 64[4], 045205 (10pp)