vA Raman study was made of H stretching modes in vacancy-H defects (VHn, where n = 1, 2, 3 or 4). The positions of the vibrational modes were compared to recent infra-red absorption results. The Raman lines exhibited a marked polarization due to the <111> orientation of the Si-H bond. Based upon the defect symmetry derived from the polarization-dependent Raman signals and the Raman intensities, the Raman lines were attributed to VH4: 2234/cm (A1 mode), 2205/cm (T2 mode); V2H6: 2180/cm (A1g mode) and 2155/cm (Eg mode). The 2120 and 2099/cm lines were tentatively attributed to VH2, and the 2022/cm line to VH.

Vacancy-Hydrogen Defects in Silicon Studied by Raman Spectroscopy. E.V.Lavrov, J.Weber, L.Huang, B.Bech Nielsen: Physical Review B, 2001, 64[3], 035204 (5pp)