Heavily B-doped (100) p+ Si with the resistivity of 0.01Ωcm was hydrogenated in boiling water to reduce the carrier concentration near the surface. Schottky diodes were successfully fabricated on the hydrogenated surface of p+ Si for deep-level transient spectroscopy measurements. This procedure was applied to intentionally Fe-contaminated p+ Si since no pairing between H and Fe occurs, in contrast with pairing between H and B. Iron-B pairs (Ev + 0.10eV) with the concentration of 4.3 x 1013/cm3 were observed for the first time by deep level transient spectroscopy in p+ Si which was Fe-contaminated.

Deep-Level Transient Spectroscopy Detection of Iron in Hydrogenated p+ Silicon. Y.Tokuda, T.Namizaki, T.Murase, T.Hasegawa, H.Shiraki: Japanese Journal of Applied Physics - 2, 2001, 40[6A], L533-5