The origin of the photoluminescence W center (or I1 center) in Si crystal was investigated by observing the change of the photoluminescence intensity of the center with implantation fluence for proton-implanted Si crystals with fluences between 1011 and 1016/cm2 at an energy of 180keV. The second-order reaction with respect to the fluence was analyzed for the formation of the W center. From the consideration of the symmetry, thermal behaviors and the order of the formation reaction of the W center, the center was determined to be well explained by the <111> split interstitial model.

Order of the Formation Reaction and the Origin of the Photoluminescence W Center in Silicon Crystal. M.Nakamura: Japanese Journal of Applied Physics - 2, 2001, 40[10A], L1000-2