The photoluminescence spectra of Si which was implanted with 150keV In+ to a dose of 1013/cm2 and annealed at 400 to 1050C was measured. In addition to the In-bound exciton lines, defect-related P and R lines appeared in the photoluminescence spectra of the samples annealed above 800C. The P and R lines grow in intensity as a result of the annealing at the higher temperatures, while the intensity of the In-bound exciton line saturates above 800C. It was found that the intensities of the P and R lines decreased with time during storage at room temperature because of the effect of H2O in air. Considering the annealing behavior of the P and R lines and the change of their intensity during storage, a model was proposed in which the luminescence centers of the P and R lines were the defect clusters with an X+-Y- structure, where X was mobile at room temperature and Y includes at least one In atom. In this model, the constituents of the defect clusters were weakly bound by Coulomb interaction, and the luminescence centers were dissociated by the influence of OH- near the Si/SiO2 interface during storage at room temperature.Luminescence Centers in Indium-Implanted Silicon. K.Terashima, T.Matsuda: Japanese Journal of Applied Physics - 1, 2002, 41[3A], 1203-8