Computer simulations of the point-defect fields in Czochralski Si crystals were reported. The model included factors such as a variable pulling rate, lagging of the crystallization rate, crystal-length increase with time, the temperature field and the shape of the crystal/melt interface, Fickian diffusion and thermodiffusion, vacancy self-interstitial recombination and annealing at the crystal surface. Temperature fields established during crystal growth were calculated using a global model of heat transfer in the system. Important cases of variable V and pulling halts were considered. Simulations successfully reproduce experimental data such as the shape and position of the interstitial and vacancy regions, including the R-OSF bands. The values of model constants, except for the critical point-defect concentrations, were the same as those obtained for pedestal Si crystals.

Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals. N.I.Puzanov, A.M.Eidenzon, D.N.Puzanov, J.Furukawa, K.Harada, N.Ono, Y.Shimanuki: Japanese Journal of Applied Physics - 1, 2002, 41[2A], 464-71