A study was made of the stress-induced shift of a deep level at Ec - 0.15eV due to a H-C complex in Si using deep-level transient spectroscopy under uniaxial compressive stress. Linear stress dependencies of the ionization energy of the above level were observed for five components of split deep level transient spectroscopy peaks altogether for <111>, <110> and <100> stresses. By subtracting the stress shifts of conduction band minima from the stress dependencies of ionization energy, the net stress shifts of the energy level were obtained. Two piezo-spectroscopic parameters, A1 and A2, were determined as approximately 0.004 and –0.0095eV/GPa, respectively. Considering a molecular-orbital schematic suggested here and throughout, it was concluded that the stress-induced level shifts and the split pattern of deep level transient spectroscopy peaks reflect the trigonal symmetry and antibonding character of the electronic state of the complex. These properties were completely consistent with the atomic configuration in which a H atom occupies the bond-centered site between Si and C atoms.

Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon. K.Fukuda, Y.Kamiura, Y.Yamashita, T.Ishiyama: Japanese Journal of Applied Physics - 1, 2001, 40[12], 6700-4