Electron spin resonance measurements were carried out for a 10nm-thick a-Si:H film. The results showed that the high-density defects in the near-surface layer could be treated in the same manner as the bulk defects in the case of light soaking, if both the penetration depth of the light and the dependence of the defect creation rate on the defect density were taken into account.Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films. T.Shimizu, M.Shimada, M.Kumeda: Japanese Journal of Applied Physics - 1, 2001, 40[11], 6327-8