The doping with Ag of Si crystals results in intense emission at 0.78eV which consists of narrow no-phonon A-B-C lines and phonon replicas. Observation of an isotope shift confirms participation of a Ag atom in the microscopic structure of the defect center responsible for this emission. Decay times of the three no-phonon lines of the 0.78eV band were measured and found to be of the order of 100µs. These long decay times were consistent with a model which assigns the investigated band to recombination of an exciton bound to an iso-electronic center.

780meV Photoluminescence Band in Silver-Doped Silicon - Isotope Effect and Time-Resolved Spectroscopy. N.Q.Vinh, T.Gregorkiewicz, K.Thonke: Physical Review B, 2002, 65[3], 033202 (4pp)