The PtH and PtH2 complexes in Si were studied by vibrational and transient-capacitance spectroscopies in the same, or similarly prepared, samples. Further, the levels of the PtH and PtH2 defects were determined from their vibrational spectra and the vibrational lines were associated with specific charge states of the defects. These results confirm that both vibrational spectroscopy and transient-capacitance methods probe the same defect complexes. These results also provide strong support for the previous assignments of deep level transient spectroscopy peaks to PtH and PtH2 complexes that were made on the basis of the depth dependence of defect-concentration profiles that were measured for etched Si samples. The intensities of the vibrational lines of the PtH and PtH2 complexes have also been calibrated so that the concentrations of these defects could be estimated from their vibrational spectra.

Pt-H Complexes in Si - Complementary Studies by Vibrational and Capacitance Spectroscopies. M.G.Weinstein, M.Stavola, K.L.Stavola, S.J.Uftring, J.Weber, J.U.Sachse, H.Lemke: Physical Review B, 2002, 65[3], 035206 (10pp)