This work compares simulations of intrinsic point defect transport for a 2cm crystal for 2 different values of the point defect recombination factor, thereafter utilizing the model for 2 more commercially relevant 10cm crystals, grown with the needle-eye technique. Using this approach to study defect transport in floating-zone configurations was the novelty of this work. The simulation of the thin 2cm crystal was compared to the qualitative Voronkov model and deep level transient spectroscopy experiments, to give some insight into the applied recombination factors. The work concludes that for large crystals, grown in the vacancy region, the influence of an uncertain recombination factor was not as significant as for smaller crystals grown with a near critical growth parameter.

Numerical Simulation of Point Defect Transport in Floating-Zone Silicon Single Crystal Growth. T.L.Larsen, L.Jensen, A.Lüdge, H.Riemann, H.Lemke: Journal of Crystal Growth, 2001, 230[1-2], 300-4