The effect of annealing in N atmosphere on the formation of crystal defects in the OSF-ring of Czochralski Si was studied by comparison with samples annealed in O atmosphere by using optical and electron beam based methods. By annealing in N the formation of extrinsic stacking faults was prevented whereas O precipitates form in nearly the same density as in the O annealed sample. Additionally, loop-like micro-defects were generated that were not observed for annealing in O ambient. The results were explained by assuming that extra vacancies were introduced into Si from the N annealing atmosphere. They were expected to recombine with Si interstitials, thus preventing the growth of the stacking faults, and to create the observed micro-defects.

Analysis of Extended Defects in Nitrogen Annealed CZ Silicon by Optical and Electron Beam Methods. C.Frigeri, M.Ma, T.Irisawa, T.Ogawa: Materials Science and Engineering B, 2002, 91-92, 170-3