Detailed simulations of defect dynamics during Czochralski growth of Si crystals demonstrate that the precipitation of either vacancies to form voids, or of self-interstitials to form stacking faults, could be avoided by a careful choice of the crystal pulling rate, V, and axial temperature gradient, G, near to the melt/crystal interface. Almost perfect crystalline Si was created, except for very small oxide precipitates, which were dissolved in subsequent annealing of the wafers. The presence of O increased the range of V/G for growth of this material.

Simulation of Almost Defect-Free Silicon Crystal Growth. Z.Wang, R.A.Brown: Journal of Crystal Growth, 2001, 231[4], 442-7