The melting-solidification process of float-zone Si was examined by means of in situ high-resolution transmission electron microscopy . Point defect clusters were observed to form at high temperatures. The {111} liquid/solid interfaces were confirmed to proceed via the lateral movement of a pair of steps having several atomic heights, while {100} liquid/solid interfaces were flat and moved between both end facets. A crystallized {111} liquid/solid interface was observed at about 20 layers. A twin band was observed at an interface close to silicide formed by surface diffusion.

In Situ HRTEM Observation of the Melting-Crystallization Process of Silicon. H.Nishizawa, F.Hori, R.Oshima: Journal of Crystal Growth, 2002, 236[1-3], 51-8