Micro-O precipitates and their effects on thin gate oxide breakdown were investigated using a crystal-originated-particle-free wafer and a low crystal-originated-particle wafer. After 2-step annealing and subsequent re-polishing, regions containing micro-O precipitates were observed inside and outside the oxidation-induced stacking fault ring. Delta [Oi] and near-surface micro-defects in those regions showed a reverse trend. It appeared that micro-O precipitates showed a different precipitation behavior from the anomalous O precipitation behavior in the conventional Czochralski Si wafer with the oxidation-induced stacking fault ring. The oxide breakdown electrical field was degraded in almost the same region as that where micro-O precipitates were revealed. This indicated that micro-O precipitates could affect the degradation of gate oxide integrity.

Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and their Effects on Thin Gate Oxide Breakdown. H.S.Kim, K.S.Lee, B.Y.Lee, H.D.Yoo, S.H.Pyi, C.G.Koh, B.S.Hong, Y.W.Kim: Japanese Journal of Applied Physics - 2, 2001, 40[12A], L1286-9