The generation processes of type-C defects on the Si(100)-(2 x 1) surface were systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. It was shown that the type-C defect was extrinsic, and was caused by bimolecular dissociative adsorption of H2O in the ultra-high vacuum environment. A structural model of the type-C defect was proposed.

Origin of Type-C Defects on the Si(100)-(2x1) Surface. M.Nishizawa, T.Yasuda, S.Yamasaki, K.Miki, M.Shinohara, N.Kamakura, Y.Kimura, M.Niwano: Physical Review B, 2002, 65[16], 161302 (4pp)