The initial stage of adsorption processes of atomic H on the Si(110)-(16 x 2) structure was studied on an atomic scale using scanning tunnelling microscopy (STM). Atomic H adsorbs preferentially on the specific site in the pentagonal building block of 16 x 2 in order to reduce surface stress. Bright spots were observed around the reaction sites because of charge transfer between pentagon atoms upon H adsorption. It was found that the framework of Si(110), namely, one-dimensional up-and-down structure, was preserved even after nearly saturation exposure of H.

Atomic Defects Generated by Hydrogen on Si(110) Surface as Revealed by Scanning Tunneling Microscopy. M.Yoshimura, M.Odawara, K.Ueda: Materials Science and Engineering B, 2002, 91-92, 120-2