In situ observations were made of homo-epitaxial growth on the Si(111)-(7 x 7) surface, whose structure was known as the dimer¯adatom stacking-fault model, by scanning tunnelling microscopy at 356C. In order to grow epitaxially, it was necessary to cancel the underlying dimer¯adatom stacking-fault dimer¯adatom stacking-fault structure. At low Si coverages, small clusters were observed within half unit cells. Then, large clusters that had no atomic image were formed. After further Si deposition, these large clusters changed into a 2-dimensional island of atomic protrusions, which implied that the underlying reconstructed layer was cancelled. After that, the 2-dimensional island transforms into the dimer¯adatom stacking-fault structure.

In Situ Observation of Initial Homoepitaxial Growth on the Si(111) 7 x 7 Surface using Scanning Tunnelling Microscopy. W.Shimada, H.Tochihara: Journal of Crystal Growth, 2002, 237-239, 35-8