High-resolution core-level spectroscopy was applied to the Si(100)-c(4 x 2) surface. A correct decomposition of the Si 2p spectrum of the clean surface was important for studies of adsorption of different species and the formation of various surface reconstructions. A very well-resolved Si 2p spectrum was presented for the Si(100)c(4 x 2) surface. The decomposition of this spectrum verifies the original decomposition scheme introduced by Landemark et al. Core-level spectra of some metal-induced Si(111) √3 x √3 surfaces were also presented. A comparison was made between the √3 x √3 reconstructions formed on Si(111) by In, a group-III atom, and by Sn, a group IV atom. Both the 4d core levels of the adatoms and the Si 2p core-level spectra were considered. Different kinds of deviation from an ideal surface may introduce a significant broadening of the core-level spectra. The effect of additional Ag atoms was analyzed for the case of the Ag/Si(111) √3 x √3 surface. By reducing the surplus of Ag atoms on this surface, a Si 2p spectrum with extremely narrow components was obtained.

High-Resolution Core-Level Spectroscopy of Si(100)c(4 x 2) and Some Metal-Induced Si(111) √3 x √3 Surfaces. R.I.G.Uhrberg: Journal of Physics - Condensed Matter, 2001, 13[49], 11181-93