Electron spin resonance studies of (100)Si/SiOx/ZrO2 stacks with nm-thick dielectric layers revealed that the Si dangling-bond-type centers Pb0, Pb1 were prominent defects at the (100)Si/dielectric interface. Based upon the Pb0, Pb1 criterion, standard thermal Si/SiO2 interface properties could be approached by annealing above 650C in vacuum in the case of Si/SiOx/ZrO2.

Si Dangling-Bond-Type Defects at the Interface of (100)Si with Ultrathin Layers of SiOx, Al2O3, and ZrO2. A.Stesmans, V.V.Afanasev: Applied Physics Letters, 2002, 80[11], 1957-9