The kinetics for the replacement process of H by D at the (100)Si/SiO2 interface was studied. Metal–oxide–semiconductor devices were initially annealed in H and then re-annealed in D at various temperatures for various durations. The D concentration CD, defined as the percentage of interface defects passivated by D, was then determined by a technique that was solely based on electrical measurements. From fundamental kinetics, activation energy E for replacing H by D at the (100)Si/SiO2 interface was determined to be 1.84eV. This result suggested that the replacement of H by D involves a process of the dissociation of molecular D at the interface.

Kinetic Study on Replacement of Hydrogen by Deuterium at (100)Si/SiO2 Interfaces. K.Cheng, K.Hess, J.W.Lyding: Journal of Applied Physics, 2001, 90[12], 6536-8