A Si surface covered with about 15nm of SrTiO3 was exposed to both atomic and molecular H at between 20 and 300C. A radio-frequency probe was used to continuously monitor changes in charge-carrier recombination centers at the SrTiO3/Si interface by following the steady-state photo-generated carrier concentration in the Si. Independent passivation of interfacial defects was observed by both atomic and molecular H.

Passivation of Defects at the SrTiO3/Si Interface with H and H2. R.J.Browne, E.A.Ogryzlo, K.Eisenbeiser, Z.Yu, R.Droopad, C.Overgaard: Applied Physics Letters, 2002, 80[15], 2699-700