Ion implantation was frequently employed in SiC for doping, electrical isolation or in the SiC on isolator technology. The ion implantation process was accompanied by the formation of intrinsic defects, which introduce deep electron and hole traps. They were believed to be mainly multivacancy complexes but the exact microscopic nature of these defects and their distribution versus the ion penetration depth was not well established. Electron paramagnetic resonance spectroscopy was used to analyze the defects which were introduced by high-energy (MeV) proton implantation. Previous investigations on n-type SiC were extended to the case of p-type Al-doped bulk samples. Both Si monovacancy and C vacancy related defects were observed. Their nature and introduction rate were determined.

Electron Paramagnetic Resonance Study of Proton Implantation Induced Defects in Monocrystalline 4H- and 6H-SiC. H.J.von Bardeleben, J.L.Cantin: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 201-5