Much effort has also been devoted to optimizing implantation and annealing parameters to improve the electrical device characteristics. However, there was a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects were unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples were implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice were studied with a multitude of characterization techniques. Some recent results were reviewed. In particular, deep level transient spectroscopy was used to investigate point defects at very low doses and transmission electron microscopy and Rutherford back-scattering spectrometry were used for studying the damage build-up at high doses.

Ion Implantation of Silicon Carbide. A.Hallén, M.S.Janson, A.Y.Kuznetsov, D.Åberg, M.K.Linnarsson, B.G.Svensson, P.O.Persson, F.H.C.Carlsson, L.Storasta, J.P.Bergman, S.G.Sridhara, Y.Zhang: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 186-94