1.6MeV He+ ions were implanted at room temperature into (00•1) 4H¯SiC to a dose of 1017/cm2. Using cross-sectional transmission electron microscopy, an investigation was made of the damage which was introduced by the implantation and by 1500C annealing. In the as-implanted sample, the damage region consists of 3 layers, including a continuous amorphous layer surrounded with crystalline zones. After annealing, recrystallization of the amorphous state occurred and large bubbles or cavities were

 
observed. A simple model based on atomic relocation was proposed to explain the layered structure observed after implantation.

Defects Induced by High Energy Helium Implantation in 4H-SiC. M.F.Beaufort, E.Oliviero, M.L.David, J.Nomgaudyte, L.Pranevicius, A.Declémy, J.F.Barbot: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 218-22