The formation of liquid-phase Si at the growth front during the process of SiC PVT growth was considered to be among the factors leading to the formation of structural defects in SiC. A brief thermodynamic analysis of the Si liquid-phase development was carried out for 1500 to 3150K. The possibility of Si liquid phase formation at the seeding surface during SiC PVT growth was demonstrated experimentally.

Liquid-Phase Silicon at the front of Crystallization during SiC PVT Growth. R.V.Drachev, G.D.Straty, D.I.Cherednichenko, I.I.Khlebnikov, T.S.Sudarshan: Journal of Crystal Growth, 2001, 233[3], 541-7