A novel technique to eliminate planar defects in the 3C-SiC hetero-epitaxial layer on Si substrate was developed. Before growing 3C-SiC, countered slopes oriented in the [110] and [¯1¯10] directions were formed over the entire surface of Si(001) substrate (undulant-Si). In the initial stage of 3C-SiC growth, step-flow epitaxy occurred on the surface slopes of the substrate, thus reducing the number of antiphase boundaries. Continuous twin boundaries were arrayed in parallel along the (111) or (¯1¯11) planes. The twin boundaries were eliminated through combination of the countered twin boundaries with 3C-SiC growth. Finally, no planar defects were observed on the surface of 200μm-thick 3C-SiC grown on so-called undulant Si.

3C-SiC Hetero-Epitaxial Growth on Undulant Si(001) Substrate. H.Nagasawa, K.Yagi, T.Kawahara: Journal of Crystal Growth, 2002, 237-239, 1244-9