Recent achievements in the bulk crystal growth of SiC were reviewed. Results on the physical vapor transport growth of SiC bulk single crystals and quality improvement of SiC crystals were presented. The causes and formation mechanisms of crystallographic defects, such as micro-pipes and low-angle grain boundaries, in SiC crystals were considered. The results of the growth perpendicular to the c-axis were also reported, where stacking faults were defects of major concern. An atomistic surface model was presented for stacking-fault generation and a possible method for avoiding the problem was proposed.

Growth of Large High-Quality SiC Single Crystals. N.Ohtani, T.Fujimoto, M.Katsuno, T.Aigo, H.Yashiro: Journal of Crystal Growth, 2002, 237-239, 1180-6