Electron paramagnetic resonance spectrum with C3v symmetry and a spin S = 1/2 was observed in p-type, electron-irradiated 4H-SiC. Based on the observed 29Si hyperfine structures, it was suggested that the defect was the isolated Si antisite (SiC). The spin S = 1/2 and the observation of the defect only in p-type material suggested that the SiC was in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the SiC+ center indicated a considerable lattice relaxation in the vicinity of the defect.

Silicon Antisite in 4H SiC. N.T.Son, P.N.Hai, E.Janzén: Physical Review Letters, 2001, 87[4], 045502 (4pp)