A previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation was reported. This emission was attributed to exciton recombination at local potential fluctuations caused by stacking faults, which were created during operation of the diodes. Various recombination mechanisms could have been responsible for the spectrum.

Luminescence from Stacking Faults in 4H SiC. S.G.Sridhara, F.H.C.Carlsson, J.P.Bergman, E.Janzén: Applied Physics Letters, 2001, 79[24], 3944-6