From critical synthesis of the published theoretical and experimental studies on biaxial stress and hydrostatic pressure influence on point defects concentrations, and physical considerations on the Ge chemical effect, the diffusion of dopants in Si¯Ge alloys (SiGe) was modeled on the basis of the evolution of single point defect concentrations induced by the presence of Ge atoms and the stress field of the SiGe material. The model was valid for SiGe strained and relaxed alloys with Ge content lower than 40% and was consistent with experimental data in the case of P and Sb.

Dopant Diffusion in SiGe - Modelling Stress and Ge Chemical Effects. A.Pakfar: Materials Science and Engineering B, 2002, 89[1-3], 225-8