The effects on the impurity content, microstructure, resistivity and barrier characteristics of TiN film deposited by an atomic layer deposition method were evaluated. The TiN films were deposited on Si(100) substrates at 450C using the reactant gases TiCl4 and NH3. The chemical and physical properties of atomic layer deposition TiN thin films were measured. The TiN films had a randomly-oriented columnar grain microstructure. The Cl content in the films was below the detection limit of Auger electron spectroscopy (< 0.5at%) due to the complete surface reaction by self-limiting reaction in atomic layer deposition method. This low Cl content in film induced a low film resistivity (120µΩcm). The barrier properties of this atomic layer deposition films were tested by the etch-pit method. The result revealed a retardation of the interdiffusion between Cu and Si in samples annealed for one hour at temperatures up to 450C.

TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization. J.Uhm, H.Jeon: Japanese Journal of Applied Physics - 1, 2001, 40[7], 4657-60