The extended defect density of ZnCdSe on InP substrates was successfully reduced by introducing BeZnTe buffer layers. A very low etch pit density around 7 x 103/cm3 was obtained for ZnCdSe layers grown on BeZnTe buffer layers. In the photoluminescence measurements at 15K for the ZnCdSe sample, sharp emission spectra without any deep-level emissions were observed around 579nm.

Reduction of Defect Density of ZnCdSe on InP Substrates by Introducing BeZnTe Buffer Layers. K.Fukada, I.Nomura, S.B.Che, E.Ogiwara, A.Kikuchi, K.Kishino: Physica Status Solidi B, 2002, 229[1], 107-10