Photoluminescence and piezoelectric photo-thermal measurements were carried out at 80K on two different ZnS epilayers grown by using diethyldisulphide (Et2S2) and dimethyldisulphide (Mt2S2) S precursors. The sample made by Mt2S2 showed deep centers acting in both non-radiative and radiative recombination processes, whilst the sample grown using the Et2S2 S precursor showed deep centers involved only in radiative recombination processes, as a possible consequence of the lower growth temperature required by the Et2S2 precursor.

Intrinsic Defects of ZnS Epitaxial Layers Grown by MOVPE. K.Yoshino, H.Komaki, P.Prete, K.Ichino, A.Memon, M.Yoneta, H.Kobayashi, N.Lovergine, A.M.Mancini: Physica Status Solidi B, 2002, 229[1], 351-4