The relaxation of strain in ZnS epilayers grown on (100) GaP was investigated using resonant Raman scattering measurements. The single LO phonon resonant Raman shift and the intensity increased but the full-width at half-maximum decreased with increasing ZnS epilayer thickness. These were attributed to relaxation of the biaxial tensile strain with generation of misfit dislocations. The critical thickness of ZnS/GaP epilayer was found to be about 35nm.

Resonant Raman Scattering Measurements of Strains in ZnS Epilayers Grown on GaP. Y.M.Yu, M.H.Hyun, S.Nam, D.Lee, B.O, K.S.Lee, P.Y.Yu, Y.D.Choi: Journal of Applied Physics, 2002, 91[11], 9429-31